You are in our Global Site
Composed of vacuum system, vacuum measurement system, gas path system, PLC+touch screen control system, sputtering system, etc. The sputtering power supply is compatible with both DC pulse sputtering power supply and RF power supply. The substrate is designed with insulation and can be connected to a pulsed bias power supply.
1. Suitable for developing nanoscale single-layer, multi-layer, and composite film layers, etc;
2. Suitable for preparing metal films, alloy films, semiconductor films, ceramic films, dielectric films, etc;
Example: Silver, aluminum, copper, nickel, chromium, nickel chromium alloy, titanium oxide, titanium nitride, chromium nitride, silicon dioxide, etc;
3. Suitable for single sputtering, sequential sputtering, and co sputtering of three targets.
Equipment model | JCP500 |
Vacuum chamber structure | vertical front door structure, rear exhaust system |
Vacuum chamber size | Φ500mm×H420mm |
Heating temperature | room temperature ~ 500℃ |
Substrate table size | Φ150mm |
Film thickness non-uniformity | ≤ ±5.0% within Φ100mm |
Sputtering target | 3 Φ3-inch magnetron targets, compatible with DC/MF/RF sputtering |
Process gas | 2-3 gas flow control |
Control mode | PLC/PC (optional) |
Footprint (main unit) | L1900mm×W800mm×H1900mm |
Total power | ≥ 10kW |
