The device is designed with integrated host and control, PLC touch screen control, easy to operate, and can complete single target independent sputtering, multi target sequential sputtering, and multi target combination co sputtering; Each sputtering target and substrate stage is equipped with independent baffles to ensure the processability of coating (pre sputtering, multi-layer film, doping, prevention of cross contamination, etc.)
1. Mainly used for developing nanoscale single-layer, multi-layer, and composite metal conductive films (optionally equipped with strong magnetic target coated magnetic material films), semiconductor films, and ceramic insulation films.
2. The insulation design of the sample stage can achieve functions such as sample plasma cleaning activation and auxiliary coating.
3. The equipment is widely used in teaching, scientific research experiments in universities and research institutes, as well as exploratory experiments and the development of new products in the early stage of production-oriented enterprises.
Equipment model | JCP350 |
Vacuum chamber structure | rear exhaust system, pneumatic lifting type |
Vacuum chamber size | Φ350mm×H350mm |
Heating temperature | room temperature~500℃ |
Substrate table size | Φ120mm |
Film thickness non-uniformity | ≤ ±5.0% within Φ75mm |
Sputtering target | Φ2 inch magnetron target 2-3 branches compatible with DC/RF sputtering |
Process gas | 2-3 gas flow control |
Control mode | PLC + touch screen control |
Footprint (main unit) | L600mm×W800mm×H1700mm L1600mm×W800mm×H1920mm |
Total power | ≥ 8kW |