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The equipment has a small volume, fast vacuum acquisition, powerful functions, and low operating costs; PLC touch screen control, easy to operate. The device comes standard with one flat target and reserves one pair of evaporation electrode interfaces, which can be used for both sputtering and evaporation (magnetron sputtering and evaporation plating cannot be performed simultaneously)
Mainly used for the development of nanoscale conductive films, semiconductor films, insulating films, etc., applying negative bias voltage to the substrate stage can achieve substrate anti splash cleaning function; Mainly used for scientific research and small-scale preparation of thin film new materials in universities, research institutes, and enterprises
| Equipment model | JCP200 |
| Vacuum chamber structure | vertical top opening structure |
| Vacuum chamber size | Φ220mm×H300mm |
| Heating temperature | room temperature ~ 500℃ |
| Substrate table size | Φ100mm |
| Film thickness non-uniformity | ≤ ±5.0% within Φ50mm |
| Sputtering target | 1 Φ2-inch magnetron target compatible with DC/RF sputtering |
| Process gas | 1-2 gas flow control |
| Control mode | PLC + touch screen control |
| Footprint (main unit) | L600mm×W800mm×H1700mm |
| Total power | ≥ 6kW |
