1、plasma enhanced chemical vapor deposition

Plasma enhanced chemical vapor deposition is a method of epitaxial growth in which gas is excited to generate low-temperature plasma, enhancing the chemical activity of reactants. This method can form a solid film at lower temperatures.

2、Hot filament chemical vapor deposition

Hot wire CVD uses low-pressure vapor deposition at high temperatures, where hydrocarbons undergo chemical reactions at high temperatures to form film precursors. When the sample temperature is appropriate, these film precursors deposit on the surface of the sample to form a diamond film. The thickness and composition of the film layer formed by low-pressure chemical vapor deposition are relatively uniform, and the film layer is dense.

3、High density plasma chemical vapor deposition

HDP-CVD (also known as ICP-CVD) can generate higher plasma density and quality than traditional PECVD equipment at lower deposition temperatures.

4、Microwave plasma chemical vapor deposition

Microwave plasma chemical vapor deposition (MPCVD) technology is suitable for preparing high-quality hard films and crystals with large area, good uniformity, high purity, and good crystal morphology.

5、Ultra high vacuum chemical vapor deposition

Ultra high vacuum chemical vapor deposition (UHV/CVD) is a key advanced thin film technology for preparing high-quality submicron crystal thin films, nanostructured materials, and developing silicon-based high-speed and high-frequency devices and nanoelectronic devices.

6、Low pressure chemical vapor deposition

The design of Low pressure Chemical Vapor Deposition (LPCVD) is a CVD reaction that reduces the operating pressure of the reaction gas during the deposition reaction in the reactor to below approximately 133Pa.

7、thermal chemical vapor deposition

Thermochemical vapor deposition (TCVD) refers to the method of gas-phase growth using high-temperature activated chemical reactions. The widely used TCVD technologies such as metal organic chemical vapor deposition, chloride chemical vapor deposition, hydride chemical vapor deposition, etc. all belong to the scope of thermochemical vapor deposition.

8、High temperature chemical vapor deposition

High temperature chemical vapor deposition is an important method for the growth of silicon carbide crystals. HTCVD growth of silicon carbide crystals is carried out in a closed reactor, with external heating to maintain the required reaction temperature (2000 ℃~2300 ℃) in the reaction chamber. High temperature chemical vapor deposition is a combination reaction that occurs on the surface of substrate materials.

9、Laser induced chemical vapor deposition

LCVD is a method of depositing thin films that utilizes the photon energy of a laser beam to excite and promote chemical vapor phase reactions. Under the action of photons, molecules in the gas phase decompose, atoms are activated, and a thin film is formed on the substrate.